Plenary Speakers

Dr Farid Medjdoub

Institute of Electronics, Microelectronics and Nanotechnology (IEMN), CNRS, Lille, France

Plenary title:

Recent progress of vertical GaN-on-Silicon devices

Short biography:

Farid Medjdoub is a CNRS senior scientist and leads the research group WIND focused on wide bandgap material and devices at IEMN in France. He received his Ph.D. in Electrical engineering from the University of Lille in 2004. Then, he moved to the University of Ulm in Germany as a research associate before joining IMEC as a senior scientist in 2008. His research interests are the design, fabrication, characterization, and simulation of innovative wide bandgap devices. Multiple state-of-the-art results have been realized in the frame of his work. Among others, world record thermal stability up to 1000°C for a field effect transistor, best combination of cut-off frequency / breakdown voltage or highest lateral GaN-on-silicon breakdown voltage using a local substrate removal have been achieved. He is author and co-author of more than 250 papers in this field. He holds several patents deriving from his research. He has been leading the Nitride power electronic activities within the French national network called GaNexT starting from 2019.

Pr Katir ZIOUCHE

Institute of Electronics, Microelectronics and Nanotechnology (IEMN), CNRS, Lille, France

Plenary title:

Réalisation de micro-dispositifs thermoélectrique.De la fluxmètrie à la récupération d’énergie

Short biography:

Pr K. Ziouche a rejoint l'Institut d'Electronique, de Microélectronique et de Nanotechnologie en 1996 et a obtenu son doctorat en Electronique en 1999 à l'Université de Lille. Il est nommé Maître de Conférences à l'IUT de Lille en 2000. Il devient Professeur des Universités en 2017. Il enseigne l'électrotechnique, l'électronique et la thermodynamique à l'Institut de Technologies de Lille. Ses principaux intérêts de recherche, à l’IEMN, sont le développement de nouveaux procédés de fabrication de microdispositifs thermiques (µcapteurs et µthermogénérateur), et il est également impliqué dans les caractérisations thermiques et électriques de matériaux thermoélectriques. Il est co-responsable du Flagship Energy au laboratoire, et depuis 2021, il a participé à la création d’un nouveau groupe de recherche WIND et il s’intéresse à la fabrication de transistors de puissance dans la filière GaN.

Pr Abdelkader AISSAT

Research Director, University Ahmed Draia Adrar Algeria, LATSI laboratory Blida1, Algeria

Plenary title:

Modélisation des nanostructures à base des semiconducteurs III-V-Si pour l’optoélectronique

Short biography:

Professor Abdelkader Aissat received the magister diploma and doctorate degree inelectronics from the University of Blida, ENP Algeria in 1999 and 2007 respectively.He became lecturer in the department of electronics of Blida University. He occupieda post of the head of electronics department. He joined the Engineering Faculty ofBlida University in 2000 to 2003 as director of pedagogy and research. His researchinterests include materials, semiconductors, semiconductors lasers, detection,modeling of the components optoelectronic, microwaves and mixed. His is an activereviewer in Elsevier, IEEE, Springer and Wiley. He has several publications morethan 240. He has achieved international projects (CNRS, PHC,……) in the field ofmaterials, new materials and nanostructures for optoelectronics and photovoltaic.